Silicon Carbide (SiC) MOSFETs & Modules

N.º de peça do fabricante	Código de encomenda	Fabricante / Descrição	Preço para	Preço	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NTBG040N120M3S	57AK6406 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 51 A 1.2 kV 0.052 ohm D2PAK-7L	Each (Supplied on Cut Tape) Segmento de fita	1+$ 10.630 10+$ 7.490 25+$ 7.070 50+$ 6.630 100+$ 6.210 Mais preços...	-	N Channel	51A	1.2kV	0.052ohm	D2PAK-7L	7Pins	18V	4.4V	329W	175°C	EliteSiC Series
NTHL040N120M3S	57AK6411 Data Sheet RoHS Data e lote	ONSEMI Silicon Carbide MOSFET N Channel 51 A 1.2 kV 0.052 ohm TO-247	Each	1+$ 11.340 10+$ 6.770 25+$ 6.620 60+$ 6.480 120+$ 6.330 Mais preços...	-	N Channel	51A	1.2kV	0.052ohm	TO-247	3Pins	18V	4.4V	329W	175°C	-
IMZC120R022M2HXKSA1	20AM0199 RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 80 A 1.2 kV 0.022 ohm TO-247	Each	1+$ 22.370 10+$ 15.430	Single	N Channel	80A	1.2kV	0.022ohm	TO-247	4Pins	18V	5.1V	329W	175°C	CoolSiC Gen 2 Series
NTH4L040N120M3S	57AK6419 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 51 A 1.2 kV 0.052 ohm TO-247	Each	25+$ 11.870 50+$ 10.730 100+$ 10.170 250+$ 8.840 500+$ 8.590	-	N Channel	51A	1.2kV	0.052ohm	TO-247	4Pins	18V	4.4V	329W	175°C	-
NTBG040N120M3S	80AK5048 RoHS	ONSEMI SIC MOSFET N-CH 1.2KV 51A D2PAK-7L	Each (Supplied on Cut Tape) Segmento de fita	1+$ 10.950 10+$ 10.240 25+$ 9.620 50+$ 9.030 100+$ 8.450 Mais preços...	-	N Channel	51A	1.2kV	0.052ohm	D2PAK-7L	7Pins	18V	4.4V	329W	175°C	EliteSiC Series