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IXTP6N100D2
Power MOSFET, N Channel, 1 kV, 6 A, 2.2 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXTP6N100D2
Newark Part No.03AH1703
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $10.330 |
| 25+ | $7.800 |
| 100+ | $5.310 |
| 250+ | $5.090 |
| 500+ | $4.920 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTP6N100D2
Newark Part No.03AH1703
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id6A
Drain Source On State Resistance2.2ohm
On Resistance Rds(on)2.2ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Power Dissipation Pd300W
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
N-channel depletion mode MOSFET suitable for use in audio amplifiers, start-up circuits, protection circuits, Ramp generators, current regulators and active loads applications.
- Normally ON mode
- Moulding epoxies meet UL94V-0 flammability classification
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
2.2ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
-
Power Dissipation Pd
300W
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
2.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
-
Power Dissipation
300W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
WARNINGProposition 65