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SIS407DN-T1-GE3
MOSFET, P CH, -20V, -25A, PPAK1212-8
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIS407DN-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.23T8483
Your Part Number
8,284 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.400 |
| 10+ | $1.120 |
| 25+ | $1.040 |
| 50+ | $0.962 |
| 100+ | $0.868 |
| 500+ | $0.782 |
| 1000+ | $0.695 |
| 2500+ | $0.654 |
Price for:Each
Minimum: 1
Multiple: 1
$1.40
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS407DN-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.23T8483
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id25A
Drain Source On State Resistance9500µohm
On Resistance Rds(on)0.0082ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Power Dissipation Pd33W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation33W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
9500µohm
Transistor Case Style
PowerPAK 1212
Power Dissipation Pd
33W
Gate Source Threshold Voltage Max
400mV
No. of Pins
8Pins
Product Range
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
25A
On Resistance Rds(on)
0.0082ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
33W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate