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ManufacturerVISHAY
Manufacturer Part NoSIA433EDJ-T1-GE3Copy
Newark Part No.
Re-Reel79R5403
Cut Tape79R5403
Product RangeTrenchFET Series
Your Part Number
2,515 In Stock
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA433EDJ-T1-GE3Copy
Newark Part No.
Re-Reel79R5403
Cut Tape79R5403
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id12A
Drain Source On State Resistance0.018ohm
On Resistance Rds(on)0.018ohm
Transistor Case StylePowerPAK SC-70
Transistor MountingSurface Mount
Power Dissipation Pd3.5W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max500mV
Power Dissipation3.5W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SIA433EDJ-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, battery switch and charger switch applications.
- New thermally enhanced PowerPAK® package
- Small footprint area
- Low ON-resistance
- 100% Rg tested
- Built in ESD protection with Zener diode
- 1800V ESD performance
- Halogen-free
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.018ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation Pd
3.5W
Gate Source Threshold Voltage Max
500mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.018ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
3.5W
Operating Temperature Max
150°C
Product Range
TrenchFET Series
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
