Print Page
SI2377EDS-T1-GE3
Power MOSFET, P Channel, 20 V, 4.4 A, 0.061 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2377EDS-T1-GE3Copy
Newark Part No.
Full Reel86R3873
Re-Reel05W6937
Cut Tape05W6937
Your Part Number
3,000 In Stock
Need more?
FREE Standard Delivery
on orders over $150
Priority Delivery available
order before 8pm EST
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.706 | $0.71 |
| Total Price | $0.71 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.706 |
| 25+ | $0.471 |
| 50+ | $0.395 |
| 100+ | $0.319 |
| 250+ | $0.286 |
| 500+ | $0.253 |
Full Reel
| Quantity | Price |
|---|---|
| 1+ | $0.200 |
| 5000+ | $0.189 |
| 10000+ | $0.165 |
| 20000+ | $0.147 |
| 30000+ | $0.135 |
| 50000+ | $0.123 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2377EDS-T1-GE3Copy
Newark Part No.
Full Reel86R3873
Re-Reel05W6937
Cut Tape05W6937
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.4A
Drain Source On State Resistance0.061ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
The SI2377EDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- 100% Rg tested
- 2000V ESD performance
- Built in ESD protection with Zener diode
- -55 to 150°C Operating temperature range
- Halogen-free
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.061ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Alternatives for SI2377EDS-T1-GE3
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate