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SI2302CDS-T1-GE3
Power MOSFET, N Channel, 20 V, 2.9 A, 0.057 ohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2302CDS-T1-GE3
Newark Part No.
Full Reel73W9408
Cut Tape16P3702
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| Cut Tape | 1 | $0.813 | $0.81 |
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| Quantity | Price |
|---|---|
| 1+ | $0.813 |
| 25+ | $0.526 |
| 50+ | $0.443 |
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| 500+ | $0.286 |
| 1000+ | $0.263 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302CDS-T1-GE3
Newark Part No.
Full Reel73W9408
Cut Tape16P3702
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.9A
Drain Source On State Resistance0.057ohm
On Resistance Rds(on)0.045ohm
Transistor MountingSurface Mount
Power Dissipation Pd710mW
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max850mV
Transistor Case StyleTO-236
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
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Product Overview
The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices.
- ±8V Gate to source voltage
Applications
Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
2.5V
Transistor Case Style
TO-236
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
2.9A
On Resistance Rds(on)
0.045ohm
Power Dissipation Pd
710mW
Gate Source Threshold Voltage Max
850mV
Power Dissipation
710mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
