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SI1469DH-T1-E3
Power MOSFET, P Channel, 20 V, 1.6 A, 0.08 ohm, SOT-323, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.160 |
| 25+ | $0.734 |
| 50+ | $0.626 |
| 100+ | $0.517 |
| 250+ | $0.467 |
| 500+ | $0.417 |
| 1000+ | $0.384 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1469DH-T1-E3Copy
Newark Part No.69W7178
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.065ohm
Transistor MountingSurface Mount
Power Dissipation Pd2.78W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Transistor Case StyleSOT-323
Power Dissipation2.78W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI1469DH-T1-E3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.08ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-323
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
1.6A
On Resistance Rds(on)
0.065ohm
Power Dissipation Pd
2.78W
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
2.78W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate