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SI1021R-T1-GE3
Power MOSFET, P Channel, 60 V, 190 mA, 4 ohm, SOT-416, Surface Mount
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.620 |
| 25+ | $0.413 |
| 50+ | $0.370 |
| 100+ | $0.327 |
| 250+ | $0.289 |
| 500+ | $0.250 |
| 1000+ | $0.225 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.62
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1021R-T1-GE3
Newark Part No.69W7170
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id190mA
Drain Source On State Resistance4ohm
On Resistance Rds(on)8ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd250mW
Transistor Case StyleSOT-416
Gate Source Threshold Voltage Max2V
Power Dissipation250mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- P-channel 60V (D-S) TrenchFET® power MOSFET
- High-side switching
- Low on-resistance of 4ohm
- Low threshold of - 2V (typ)
- Fast switching speed of 20ns (typ)
- Low input capacitance of 20pF (typ)
- Miniature package
- 2KV ESD protected
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
250mW
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
190mA
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-416
Power Dissipation
250mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate