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STW5NK100Z
Power MOSFET, N Channel, 1 kV, 3.5 A, 3.7 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW5NK100Z
Newark Part No.38K7936
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
| Quantity | Price |
|---|---|
| 1+ | $5.190 |
| 10+ | $4.380 |
| 120+ | $3.430 |
| 510+ | $2.920 |
| 1020+ | $2.540 |
| 2520+ | $2.350 |
Price for:Each
Minimum: 1
Multiple: 1
$5.19
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW5NK100Z
Newark Part No.38K7936
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id3.5A
On Resistance Rds(on)3.7ohm
Drain Source On State Resistance3.7ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STW5NK100Z is a SuperMESH3™ N-channel Power MOSFET features minimized gate charge. This new SuperMESH™ Power MOSFET is the result of further design improvements on ST's well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.
- Extremely high dV/dt capability
- 100% Avalanche tested
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
3.7ohm
Transistor Case Style
TO-247
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
3.5A
Drain Source On State Resistance
3.7ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate