TLP293-4(E(T

TLP293-4(E(T consists of phototransistors optically coupled to infrared emitting diodes. TLP293-4 photocoupler is housed in very small and thin SO16 package. Since TLP293-4 is guaranteed wide operating temperature range (Ta=-55 to 125˚C), and high isolation voltage (3750Vrms), it is suitable for high density surface mount applications such as programmable controllers. Safety standards are UL 1577, File No.E67349, CSA Component Acceptance Service No.5A File No.E67349.

• Collector-emitter breakdown voltage is 80V min (IC = 0.5mA, Ta = 25°C)
• Current transfer ratio range from 50 to 600% (IF = 5mA, VCE = 5V, Ta = 25°C)
• Isolation voltage is 3750Vrms min (AC, 60s, Ta = 25°C)
• Input forward voltage is 1.25V typ (IF = 10 mA, Ta = 25°C)
• Emitter-collector breakdown voltage is 7V min (IE = 0.1 mA, Ta = 25°C)
• Saturated current transfer ratio is 60% typ (IF = 1 mA, VCE = 0.4 V, Ta = 25°C)
• OFF-state collector current is 10µA max (VF = 0.7V, VCE = 48V, Ta = 25°C)
• Total capacitance (input to output) is 0.8pF (VS = 0V, f = 1MHz, Ta = 25°C)
• Isolation resistance is 10¹⁴ typical (VS = 500V, R.H.≤ 60%, Ta = 25°C)
• 16pin SOIC package, operating temperature range from -55 to 125°C