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| Tipo de Embalagem | Quantidade | Preço unitário: | Total |
|---|---|---|---|
| Segmento de fita | 1 | $ 4.670 | $ 4.67 |
| Total Preço | $ 4.67 | ||
| Quantidade | Preço |
|---|---|
| 1+ | $ 4.670 |
| 50+ | $ 3.270 |
| 100+ | $ 2.960 |
| 250+ | $ 2.820 |
| 500+ | $ 2.760 |
| 1000+ | $ 2.710 |
| 2500+ | $ 2.650 |
| 5000+ | $ 2.590 |
Informação do produto
Descrição geral do produto
STGAP2SICSNTR is a galvanically isolated 4A single gate driver for SiC MOSFETs. It provides galvanic isolation between the gate driving channel and the low-voltage control and interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high-power applications such as power conversion and motor driver inverters in industrial applications. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. Typical applications are motor drivers for home appliances, factory automation, industrial drives, and fans, 600/1200V inverters, battery chargers, induction heating, welding, UPS, power supply units, DC-DC converters, and power factor correction.
- Driver current capability: 4A sink/source at 25°C
- dV/dt transient immunity ±100V/ns in full temperature range
- Overall input-output propagation delay is 75ns
- UVLO function, gate driving voltage up to 26V
- Temperature shut-down protection, standby function
- 4.8kVPK isolation, UL 1577 recognized
- Maximum switching frequency is 1MHz
- Common-mode transient immunity, dVISO/dt is 100V/ns minimum (VCM = 1500V)
- GON-GOFF output configuration, SO-8 package
- Operating junction temperature range from -40 to 125°C
Especificações Técnicas
1Channels
Isolated
SOIC
SOIC
-
4A
5.5V
150°C
75ns
-
No SVHC (25-Jun-2025)
Isolated
SiC MOSFET
8Pins
Surface Mount
4A
3.1V
-50°C
75ns
-
MSL 3 - 168 hours
Documentação técnica (2)
Legislação e Ambiente
RoHS
RoHS
Certificado de conformidade do produto
