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| Tipo de Embalagem | Quantidade | Preço unitário: | Total |
|---|---|---|---|
| Segmento de fita | 1 | $ 1.520 | $ 1.52 |
| Total Preço | $ 1.52 | ||
| Quantidade | Preço |
|---|---|
| 1+ | $ 1.520 |
| 50+ | $ 1.010 |
| 100+ | $ 0.895 |
| 250+ | $ 0.841 |
| 500+ | $ 0.808 |
| 1000+ | $ 0.801 |
| 2500+ | $ 0.785 |
| 5000+ | $ 0.769 |
Informação do produto
Descrição geral do produto
The IR2104STRPBF is a high voltage high speed power MOSFET and IGBT Half-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout
- 3.3, 5 and 15V Logic input compatible
- Cross-conduction prevention logic
- Internally set dead-time
- High-side output in phase with input
- Shut down input turns OFF both channels
- Matched propagation delay for both channels
Aplicações
Industrial, Computers & Computer Peripherals, Communications & Networking
Avisos
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Especificações Técnicas
2Channels
Half Bridge
8Pins
SOIC
Non-Inverting
360mA
20V
125°C
150ns
-
No SVHC (25-Jun-2025)
-
MOSFET
SOIC
Surface Mount
210mA
10V
-40°C
680ns
-
MSL 2 - 1 year
Documentação técnica (2)
Produtos associados
3 produtos encontrados
Legislação e Ambiente
RoHS
RoHS
Certificado de conformidade do produto
