IR2102SPBF

IR2102SPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

• Floating channel designed for bootstrap operation fully operational to +600V
• Tolerant to negative transient voltage dV/dt immune, undervoltage lockout
• Gate drive supply range from 10 to 20V, turn-on and off delay matching is 50ns max (TA=25°C)
• Matched propagation delay for both channels, out of phase with input
• Delay matching, HS & LS turn-on/off is 50ns max (VBIAS (VCC, VBS)=15V, CL=1000pF and TA=25°C)
• Output high short circuit pulsed current is 130mA min (VO=0V, VIN=Logic “1”, PW ≤ 10µs)
• Output low short circuit pulsed current is 270mA min (VO=15V, VIN=Logic “0”, PW ≤ 10µs)
• Turn-on propagation delay is 160ns typ (VS=0V, VBIAS (VCC, VBS)=15V, CL=1000pF and TA=25°C)
• Turn-off propagation delay is 150ns typ (VS=600V, CL=1000pF and TA=25°C)
• 8 lead SOIC package, ambient temperature range from -40 to 125°C