AUIRF7759L2TR

AUIRF7759L2TR is a 75V automotive single N-channel HEXFET power MOSFET in a DirectFET® L8 package rated at 26 amperes optimized with low on resistance. This HEXFET® power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging platform coupled with latest silicon technology allows this MOSFET to offer substantial system-level savings and performance improvement specifically in motor drive, high-frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make it a highly efficient, robust and reliable device for high-current automotive applications. Applications include automotive 48V motor drive, brushless motor drive, and electric power steering.

• Advanced process technology, exceptionally small footprint and low profile
• High power density, low parasitic parameters, dual sided cooling
• Repetitive avalanche capability for robustness and reliability
• Drain-to-source breakdown voltage is 75V at VGS = 0V, ID = 250µA, TJ = 25°C
• Static drain-to-source on-resistance is 1.8mohm typ at VGS = 10V, ID = 96A, TJ = 25°C
• Drain-to-source leakage current is 20µA max at VDS = 75V, VGS = 0V, TJ = 25°C
• Total gate charge is 200nC typ at VDS = 38V, TJ = 25°C
• Turn-on delay time is 18ns typ at VDD = 38V, VGS = 10V, ID = 96A, RG = 1.8ohm
• Continuous source current (body diode) is 160A maximum
• Operating junction and storage temperature range from -55 to + 175°C