NV6522-RA
Power IC, GaNsafe, 11 to 18V, -40 °C to 150 °C, TOLL-16
Precisa de mais?
| Tipo de Embalagem | Quantidade | Preço unitário: | Total |
|---|---|---|---|
| Segmento de fita | 1 | $ 28.570 | $ 28.57 |
| Total Preço | $ 28.57 | ||
| Quantidade | Preço |
|---|---|
| 1+ | $ 28.570 |
| 10+ | $ 27.080 |
| 25+ | $ 25.360 |
| 50+ | $ 23.980 |
| 100+ | $ 22.380 |
| 250+ | $ 21.340 |
| 500+ | $ 20.540 |
| 1000+ | $ 19.620 |
Informação do produto
Descrição geral do produto
NV6522-RA is a power IC. It is a thermally-enhanced top-cooled SMD version of the GaNFast™ power IC family, optimized for higher power systems using GaNSafe™ technology, making it the ideal choice for high-frequency, high-power-density, and high efficiency power systems in data center, solar, industrial, and automotive segments. The GaNFast power IC integrates GaN FET(s) with gate drive to create an easy-to-use power stage building block. The GaNSafe technology further integrates critical protection and performance features that enable unprecedented reliability and robustness. Applications/topologies include AC-DC, DC-DC, CCM or CrM TP-PFC, optimized for synchronous half-bridge, full bridge, 3-phase, or buck/boost operation, data center CRPS, and solar inverter/ESS, EV OBC and DC-DC converter, and motor drive.
- Paralleling capability up to 2x power ICs
- Zero reverse-recovery charge, 2kV ESD all pins
- Turn-ON and Turn-OFF dV/dt programmability
- VDS: 650V continuous / 800V transient
- Drain-source leakage current is 2.0µA typ at VDS = 650V, VDRIVE = 0V
- Drain-source resistance is 40mohm typ at VDRIVE = 15V, IDS = 13A
- JEDEC and IPC-9701 qualifications
- dV/dt immunity up to 100V/ns
- TOLT-16L top-cooled SMD package
- Junction temperature range from -40 to +150°C
Especificações Técnicas
GaNsafe Power IC
18V
16Pins
150°C
-
To Be Advised
11V
TOLL
-40°C
GaNSafe Series
MSL 3 - 168 hours
Documentação técnica (1)
Legislação e Ambiente
RoHS
RoHS
Certificado de conformidade do produto