Silicon Carbide (SiC) MOSFETs & Modules

N.º de peça do fabricante	Código de encomenda	Fabricante / Descrição	Preço para	Preço	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NTHL060N090SC1	91AH8485 Data Sheet RoHS Data e lote	ONSEMI Silicon Carbide MOSFET Single N Channel 46 A 900 V 0.06 ohm TO-247	Each	1+$ 11.790 10+$ 11.040 25+$ 10.300 60+$ 9.550 120+$ 9.270 Mais preços...	Single	N Channel	46A	900V	0.06ohm	TO-247	3Pins	15V	2.7V	221W	175°C	EliteSiC Series
SCT040H65G3AG	83AK4852 RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 30 A 650 V 0.055 ohm H2PAK	Each (Supplied on Cut Tape) Segmento de fita	1+$ 11.660 10+$ 8.090 25+$ 7.660 50+$ 7.250 100+$ 6.890 Mais preços...	Single	N Channel	30A	650V	0.055ohm	H2PAK	7Pins	18V	4.2V	221W	175°C	-
SCT040H65G3-7	49AM4723 RoHS	STMICROELECTRONICS SIC MOSFET N-CH 650V 30A H2PAK	Each (Supplied on Cut Tape) Segmento de fita	1+$ 12.650 10+$ 11.340 25+$ 10.760 50+$ 9.670 100+$ 8.860 Mais preços...	Single	N Channel	30A	650V	0.063ohm	H2PAK	7Pins	18V	4.2V	221W	175°C	-
SCT040HU65G3AG	83AK4851 RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 30 A 650 V 0.055 ohm HU3PAK	Each (Supplied on Cut Tape) Segmento de fita	1+$ 13.550 10+$ 11.490 25+$ 10.920 50+$ 10.390 100+$ 9.900 Mais preços...	Single	N Channel	30A	650V	0.055ohm	HU3PAK	7Pins	18V	4.2V	221W	175°C	-
NVH4L060N090SC1	12AJ7264 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 46 A 900 V 0.084 ohm TO-247	Each	1+$ 17.840 10+$ 12.370	Single	N Channel	46A	900V	0.084ohm	TO-247	4Pins	15V	4.3V	221W	175°C	EliteSiC Series