Silicon Carbide (SiC) MOSFETs & Modules

N.º de peça do fabricante	Código de encomenda	Fabricante / Descrição	Preço para	Preço	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
IMZA75R040M1HXKSA1	97AK2418 RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 44 A 750 V 0.037 ohm TO-247	Each	1+$ 15.090 10+$ 13.410 25+$ 11.730 50+$ 10.050 100+$ 9.490 Mais preços...	Single	N Channel	44A	750V	0.037ohm	TO-247	4Pins	20V	5.6V	185W	175°C	CoolSiC Gen 1 Series
AIMZA75R040M1HXKSA1	97AK2008 RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 44 A 750 V 0.037 ohm TO-247	Each	1+$ 16.700 10+$ 14.840 25+$ 13.000 50+$ 11.150 100+$ 10.540 Mais preços...	Single	N Channel	44A	750V	0.037ohm	TO-247	4Pins	20V	5.6V	185W	175°C	CoolSiC Gen 1 Series
SCT055HU65G3AG	83AK4853 RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 30 A 650 V 0.072 ohm HU3PAK	Each (Supplied on Cut Tape) Segmento de fita	1+$ 13.010 10+$ 9.570 25+$ 9.080 50+$ 8.640 100+$ 8.230 Mais preços...	Single	N Channel	30A	650V	0.072ohm	HU3PAK	7Pins	18V	4.2V	185W	175°C	-
SCT055H65G3AG	49AM4725 RoHS	STMICROELECTRONICS SIC MOSFET N-CH 650V 30A H2PAK	Each (Supplied on Cut Tape) Segmento de fita	1+$ 12.230 10+$ 10.970 25+$ 10.400 50+$ 9.350 100+$ 8.570 Mais preços...	Single	N Channel	30A	650V	0.072ohm	H2PAK	7Pins	18V	4.2V	185W	175°C	-
G3F60MT06L-TR	16AM7754 Data Sheet	GENESIC Silicon Carbide MOSFET AEC-Q101 Single N Channel 48 A 650 V 0.075 ohm TOLL	Each (Supplied on Cut Tape) Segmento de fita	1000+$ 5.720	Single	N Channel	48A	650V	0.075ohm	TOLL	8Pins	18V	4.3V	185W	175°C	-