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NTJS4151PT1G
Power MOSFET, P Channel, 20 V, 4.2 A, 0.06 ohm, SOT-363, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTJS4151PT1GCopy
Manufacturer Standard Lead Time22 weeks
Newark Part No.
Re-Reel81Y7048RL
Cut Tape81Y7048
Your Part Number
28,209 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.594 | $0.59 |
| Total Price | $0.59 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.594 |
| 50+ | $0.380 |
| 100+ | $0.254 |
| 250+ | $0.227 |
| 500+ | $0.200 |
| 1000+ | $0.182 |
| 2500+ | $0.178 |
| 5000+ | $0.175 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJS4151PT1GCopy
Manufacturer Standard Lead Time22 weeks
Newark Part No.
Re-Reel81Y7048RL
Cut Tape81Y7048
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.2A
On Resistance Rds(on)0.047ohm
Drain Source On State Resistance0.06ohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Power Dissipation Pd1W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTJS4151PT1G is a P-channel single Trench Power MOSFET offers -20V drain source voltage and -3.3A continuous drain current. It is suitable for use as high side load switches, cell phones, computing, digital cameras, MP3s and PDAs.
- Leading Trench technology for low RDS (ON) extending battery life
- Small outline (2 x 2 mm) for maximum circuit board utilization
- Gate diodes for ESD protection
- -55 to 150°C Operating junction temperature range
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.047ohm
Transistor Case Style
SOT-363
Power Dissipation Pd
1W
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
4.2A
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
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3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate