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NTA4151PT1G
Power MOSFET, P Channel, 20 V, 760 mA, 0.36 ohm, SC-75, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNTA4151PT1G
Newark Part No.10N9708
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.241 |
| 25+ | $0.192 |
| 50+ | $0.153 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTA4151PT1G
Newark Part No.10N9708
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id760mA
On Resistance Rds(on)0.26ohm
Drain Source On State Resistance0.36ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd301mW
Transistor Case StyleSC-75
Gate Source Threshold Voltage Max450mV
Power Dissipation301mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
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Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.26ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
301mW
Gate Source Threshold Voltage Max
450mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
760mA
Drain Source On State Resistance
0.36ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-75
Power Dissipation
301mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
WARNINGProposition 65