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MGSF2N02ELT1G.
Power MOSFET, N Channel, 20 V, 2.8 A, 0.078 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMGSF2N02ELT1G.
Newark Part No.29AC8289
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.8A
Drain Source On State Resistance0.078ohm
On Resistance Rds(on)0.078ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.25W
Gate Source Threshold Voltage Max500mV
Transistor Case StyleSOT-23
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.078ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.25W
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.8A
On Resistance Rds(on)
0.078ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
500mV
Power Dissipation
1.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate