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ManufacturerONSEMI
Manufacturer Part NoFQD2N100TM
Newark Part No.
Full Reel28H9904
Cut Tape15R3445
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 12 week(s)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD2N100TM
Newark Part No.
Full Reel28H9904
Cut Tape15R3445
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id1.6A
Drain Source On State Resistance9ohm
On Resistance Rds(on)7.1ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd50W
Gate Source Threshold Voltage Max5V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FQD2N100TM is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (12nC)
- Low Crss (5pF)
- 100% avalanche tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
9ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.6A
On Resistance Rds(on)
7.1ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
50W
Power Dissipation
50W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate