Print Page
FDC6561AN
Dual MOSFET, N Channel, 30 V, 2.5 A, 0.082 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC6561ANCopy
Newark Part No.
Re-Reel58K8828
Cut Tape58K8828
Your Part Number
23,709 In Stock
Need more?
2709 US Stock delivery in 1-3 Business Days Order before 8pm EST Standard Shipping
21000 UK Stock available for delivery in 4-6 Business Days
Order before 8pm EST Standard Shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.020 | $1.02 |
| Total Price | $1.02 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.020 |
| 25+ | $0.648 |
| 50+ | $0.533 |
| 100+ | $0.417 |
| 250+ | $0.389 |
| 500+ | $0.361 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6561ANCopy
Newark Part No.
Re-Reel58K8828
Cut Tape58K8828
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id2.5A
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.082ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
- Low gate charge
- Very fast switching
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.082ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for FDC6561AN
2 Products Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
