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FDC655BN
Power MOSFET, N Channel, 30 V, 6.3 A, 0.025 ohm, SuperSOT, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFDC655BN
Newark Part No.15R3422
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC655BN
Newark Part No.15R3422
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id6.3A
Drain Source On State Resistance0.025ohm
On Resistance Rds(on)0.021ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.6W
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max1.9V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Alternatives for FDC655BN
1 Product Found
Product Overview
The FDC655BN is a logic level single N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimized ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
1.9V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
6.3A
On Resistance Rds(on)
0.021ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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Product Compliance Certificate
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