Print Page
NTR1P02LT3G
Power MOSFET, P Channel, 20 V, 1.3 A, 0.22 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTR1P02LT3G
Newark Part No.
Full Reel05R9179
Re-Reel81Y7054
Cut Tape81Y7054
Your Part Number
Technical Datasheet
130 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $0.435 | $0.023 |
| 10+ | $0.278 | $0.023 |
| 25+ | $0.247 | $0.023 |
| 50+ | $0.215 | $0.023 |
| 100+ | $0.184 | $0.023 |
Full Reel
| Quantity | Price |
|---|---|
| 6000+ | $0.110 |
| 12000+ | $0.098 |
| 18000+ | $0.093 |
| 30000+ | $0.084 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTR1P02LT3G
Newark Part No.
Full Reel05R9179
Re-Reel81Y7054
Cut Tape81Y7054
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.3A
On Resistance Rds(on)0.14ohm
Drain Source On State Resistance0.22ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd400mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Alternatives for NTR1P02LT3G
3 Products Found
Product Overview
NTR1P02LT3G is a P Channel, -20V, -1.3A, 0.14ohm, power MOSFET. This miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are DC-DC converters and power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
- Low RDS(on) provides higher efficiency and extends battery life
- Drain to source breakdown voltage is -20V min
- Zero gate voltage drain current is -1µA at (VDS = -16V, VGS = 0V)
- Gate threshold voltage is -1.25V
- 225pF input capacitance at VDS = -5V
- 7/18ns turn-on/off delay time, 15/9ns rise/fall time (VGS=-4.5V, VDD=-5V, ID=-1A, RL=5ohm, RG=6ohm)
- Thermal resistance junction to ambient (RJA) is 300°C/W
- 400mW total power dissipation at TA = 25°C
- 3-pin SOT-23 package saves board space
- Operating and storage temperature (TJ, Tstg) range from - 55 to 150°C
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.14ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
400mW
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
1.3A
Drain Source On State Resistance
0.22ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
