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ManufacturerONSEMI
Manufacturer Part No2SK3666-3-TB-E
Newark Part No.13AC6280
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part No2SK3666-3-TB-E
Newark Part No.13AC6280
Technical Datasheet
Breakdown Voltage Vbr-30V
Gate Source Breakdown Voltage Max-30V
Zero Gate Voltage Drain Current Idss Min1.2mA
Zero Gate Voltage Drain Current Max3mA
Gate Source Cutoff Voltage Max-2.2V
Transistor Case StyleSOT-23
Transistor TypeJFET
Channel TypeN Channel
No. of Pins3 Pin
Operating Temperature Max150°C
Transistor MountingSurface Mount
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2020)
Technical Specifications
Breakdown Voltage Vbr
-30V
Zero Gate Voltage Drain Current Idss Min
1.2mA
Gate Source Cutoff Voltage Max
-2.2V
Transistor Type
JFET
No. of Pins
3 Pin
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (25-Jun-2020)
Gate Source Breakdown Voltage Max
-30V
Zero Gate Voltage Drain Current Max
3mA
Transistor Case Style
SOT-23
Channel Type
N Channel
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2020)
Download Product Compliance Certificate
Product Compliance Certificate