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TN0702N3-G
Power MOSFET, N Channel, 20 V, 530 mA, 1.3 ohm, TO-92, Through Hole
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ManufacturerMICROCHIP
Manufacturer Part NoTN0702N3-GCopy
Manufacturer Standard Lead Time6 weeks
Newark Part No.53Y4241
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| Quantity | Price |
|---|---|
| 1+ | $1.570 |
| 10+ | $1.440 |
| 25+ | $1.310 |
| 50+ | $1.250 |
| 100+ | $1.170 |
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Product Information
ManufacturerMICROCHIP
Manufacturer Part NoTN0702N3-GCopy
Manufacturer Standard Lead Time6 weeks
Newark Part No.53Y4241
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id530mA
Drain Source On State Resistance1.3ohm
On Resistance Rds(on)1ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1V
Power Dissipation Pd1W
Power Dissipation1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Product Overview
This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
- Suitable for Logic level interfaces (TTL and CMOS), Solid state relays, Battery operated systems, Photo voltaic drives, Analog switches etc.
- Low threshold - 1.6V max.
- High input impedance
- Low input capacitance - 130pF typical
- Fast switching speeds
- Low on-resistance guaranteed at VGS = 2, 3, and 5V
- Free from secondary breakdown
- Low input and output leakage
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
1.3ohm
Transistor Case Style
TO-92
Rds(on) Test Voltage
5V
Power Dissipation Pd
1W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
530mA
On Resistance Rds(on)
1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1V
Power Dissipation
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability