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BSO220N03MDGXUMA1
Dual MOSFET, N Channel, 30 V, 30 V, 6 A, 6 A, 0.0183 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSO220N03MDGXUMA1Copy
Newark Part No.79X1339
Also Known AsBSO220N03MD G, SP000447478
Your Part Number
4,796 In Stock
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| Quantity | Price |
|---|---|
| 5+ | $1.170 |
| 10+ | $0.516 |
| 25+ | $0.471 |
| 50+ | $0.426 |
| 100+ | $0.381 |
| 250+ | $0.352 |
| 500+ | $0.322 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.85
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSO220N03MDGXUMA1Copy
Newark Part No.79X1339
Also Known AsBSO220N03MD G, SP000447478
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id6A
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Drain Source On State Resistance N Channel0.0183ohm
Drain Source On State Resistance P Channel0.0183ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSO220N03MD G is a dual N-channel MOSFET optimized for 5V driver application (notebook, VGA and POL) and qualified for consumer level application. The ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages make OptiMOS™ power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in server, data-com and telecom applications.
- Low FOMSW for high frequency SMPS
- 100% Avalanche tested
- Very low ON-resistance
- Excellent gate charge
- Halogen-free
Applications
Industrial, Power Management, Communications & Networking
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance P Channel
0.0183ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
MSL 3 - 168 hours
Continuous Drain Current Id
6A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.0183ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate