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BF998E6327HTSA1
RF FET, 12V, 0.03A, SOT-143
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBF998E6327HTSA1
Newark Part No.
Re-Reel50Y1746
Cut Tape50Y1746
Your Part Number
No Longer Available
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoBF998E6327HTSA1
Newark Part No.
Re-Reel50Y1746
Cut Tape50Y1746
Technical Datasheet
Drain Source Voltage Vds12V
Continuous Drain Current Id30mA
Power Dissipation200mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleTO-252
No. of Pins4Pins
RF Transistor CaseSOT-143
Operating Temperature Max150°C
Channel TypeN Channel
Power Dissipation Pd200mW
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The BF 998 E6327 is a silicon N-channel MOSFET Triode for low-noise and gain-controlled input stage up to 1GHz.
- Short-channel transistor with high S/C quality factor
- Qualified according AEC-Q101
Technical Specifications
Drain Source Voltage Vds
12V
Power Dissipation
200mW
Operating Frequency Max
-
No. of Pins
4Pins
Operating Temperature Max
150°C
Power Dissipation Pd
200mW
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Continuous Drain Current Id
30mA
Operating Frequency Min
-
Transistor Case Style
TO-252
RF Transistor Case
SOT-143
Channel Type
N Channel
Transistor Mounting
Surface Mount
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
