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SI4943BDY-T1-E3
Dual MOSFET, Dual P Channel, 20 V, 6.3 A
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4943BDY-T1-E3Copy
Newark Part No.57J5552
Technical Datasheet
Channel TypeDual P Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id8.4A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel6.3A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.019ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
Dual P Channel
Continuous Drain Current Id
8.4A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
6.3A
Drain Source On State Resistance P Channel
0.019ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.1W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate