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ON SEMICONDUCTOR  MMBF170LT1G  MOSFET Transistor, N Channel, 500 mA, 60 V, 5 ohm, 10 V, 3 V

ON SEMICONDUCTOR MMBF170LT1G
Technical Data Sheet (98.54KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MMBF170LT1G is a N-channel Power MOSFET with drain source voltage at 60VDC and drain current at 500mA.
  • AEC-Q101 Qualified
  • PPAP capable

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
500mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
5ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
225mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

Substitutes

MOSFET Transistor, N Channel, 500 mA, 60 V, 5 ohm, 10 V, 3 V

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MOSFET Transistor, N Channel, 500 mA, 60 V, 5 ohm, 10 V, 3 V

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