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INFINEON  IKW30N60T  IGBT Single Transistor, General Purpose, 60 A, 2.05 V, 187 W, 600 V, TO-247, 3 Pins

INFINEON IKW30N60T
Technical Data Sheet (899.10KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IKW30N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
  • Lowest Vce (sat) drop for lower conduction losses
  • Low switching losses
  • Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
  • High ruggedness, temperature stable behaviour
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Highest efficiency
  • Low conduction and switching losses

 

Product Information

DC Collector Current:
60A
Collector Emitter Saturation Voltage Vce(on):
2.05V
Power Dissipation Pd:
187W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-40 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Alternative Energy;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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