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FQP4N90C
Power MOSFET, N Channel, 900 V, 4 A, 3.5 ohm, TO-220AB, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP4N90CCopy
Newark Part No.31Y1553
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id4A
On Resistance Rds(on)3.5ohm
Drain Source On State Resistance3.5ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd140W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (17-Jan-2022)
Product Overview
The FQP4N90C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (17nC)
- Low Crss (5.6pF)
- 100% avalanche tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
900V
On Resistance Rds(on)
3.5ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
140W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
3.5ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate