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FQP12P20
Power MOSFET, P Channel, 200 V, 11.5 A, 0.36 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP12P20Copy
Newark Part No.97K0163
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id11.5A
Drain Source On State Resistance0.36ohm
On Resistance Rds(on)0.36ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd120W
Gate Source Threshold Voltage Max5V
Power Dissipation120W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (17-Jan-2022)
Product Overview
The FQP12P20 is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% Avalanche tested
- 31nC Typical gate charge
- 30pF Typical low Crss
Applications
Power Management, Motor Drive & Control, Audio
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
11.5A
On Resistance Rds(on)
0.36ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
120W
Power Dissipation
120W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.36ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
