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PHD13003C,126
Bipolar (BJT) Single Transistor, NPN, 400 V, 1.5 A, 2.1 W, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHD13003C,126
Newark Part No.70R7415
Technical Datasheet
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Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHD13003C,126
Newark Part No.70R7415
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Collector Emitter Voltage V(br)ceo400V
Continuous Collector Current1.5A
Power Dissipation2.1W
Power Dissipation Pd2.1W
DC Collector Current1.5A
Transistor Case StyleTO-92
DC Current Gain hFE25hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min25hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
400V
Power Dissipation
2.1W
DC Collector Current
1.5A
DC Current Gain hFE
25hFE
No. of Pins
3Pins
DC Current Gain hFE Min
25hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
400V
Continuous Collector Current
1.5A
Power Dissipation Pd
2.1W
Transistor Case Style
TO-92
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate