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TSKS5400S
Infrared Emitter, 950 nm, 30 °, Side Looking, 800 mW/Sr, 800 ns
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoTSKS5400S
Newark Part No.86H2546
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoTSKS5400S
Newark Part No.86H2546
Technical Datasheet
Peak Wavelength950nm
Angle of Half Intensity30°
Diode Case StyleSide Looking
Radiant Intensity (Ie)800mW/Sr
Rise Time800ns
Fall Time tf-
Forward Current If(AV)100mA
Forward Voltage VF Max1.3V
Operating Temperature Min-25°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (16-Jan-2020)
Product Overview
The TSKS5400S is a 950nm Infrared Emitting Diode in GaAs technology. It is moulded in a clear plastic package. It is suitable for use in photointerrupters, transmissive sensors, gap sensors, reflective sensors.
- High reliability
- High radiant power
- High radiant intensity
- ϕ = ±30° Angle of half intensity
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
Technical Specifications
Peak Wavelength
950nm
Diode Case Style
Side Looking
Rise Time
800ns
Forward Current If(AV)
100mA
Operating Temperature Min
-25°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
30°
Radiant Intensity (Ie)
800mW/Sr
Fall Time tf
-
Forward Voltage VF Max
1.3V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (16-Jan-2020)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jan-2020)
Download Product Compliance Certificate
Product Compliance Certificate