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SISS61DN-T1-GE3
Power MOSFET, P Channel, 20 V, 111.9 A, 3500 µohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS61DN-T1-GE3Copy
Manufacturer Standard Lead Time21 weeks
Newark Part No.42AJ0521
Product RangeTrenchFET Gen III
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
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| Quantity | Price |
|---|---|
| 6000+ | $0.791 |
Price for:Each
Minimum: 6000
Multiple: 6000
$4,746.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS61DN-T1-GE3Copy
Manufacturer Standard Lead Time21 weeks
Newark Part No.42AJ0521
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id111.9A
Drain Source On State Resistance3500µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation65.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
111.9A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
Power Dissipation
65.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
3500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
8Pins
Product Range
TrenchFET Gen III
SVHC
To Be Advised
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate