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SIS862ADN-T1-GE3
Power MOSFET, N Channel, 60 V, 52 A, 0.0072 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIS862ADN-T1-GE3
Newark Part No.42AJ0532
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 50 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.597 |
Price for:Each
Minimum: 6000
Multiple: 3000
$3,582.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS862ADN-T1-GE3
Newark Part No.42AJ0532
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id52A
Drain Source On State Resistance0.0072ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation39W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
52A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0072ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate