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SIA447DJ-T1-GE3
MOSFET, P-CH, 12V, PPAK-SC70
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIA447DJ-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.62W0504
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 39 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.010 |
| 10+ | $0.715 |
| 100+ | $0.445 |
| 500+ | $0.307 |
| 1000+ | $0.258 |
| 2500+ | $0.245 |
| 10000+ | $0.231 |
Price for:Each
Minimum: 1
Multiple: 1
$1.01
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA447DJ-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.62W0504
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id12A
Drain Source On State Resistance0.0135ohm
On Resistance Rds(on)0.011ohm
Transistor Case StylePowerPAK SC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd19W
Gate Source Threshold Voltage Max400mV
Power Dissipation19W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.0135ohm
Transistor Case Style
PowerPAK SC-70
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.011ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
19W
Power Dissipation
19W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Alternatives for SIA447DJ-T1-GE3
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate