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SI7141DP-T1-GE3
Power MOSFET, P Channel, 20 V, 60 A, 0.0019 ohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7141DP-T1-GE3
Newark Part No.
Full Reel86R3922
Cut Tape69W7222
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.450 |
| 25+ | $2.380 |
| 50+ | $2.080 |
| 100+ | $1.770 |
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| Quantity | Price |
|---|---|
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| 10000+ | $0.960 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7141DP-T1-GE3
Newark Part No.
Full Reel86R3922
Cut Tape69W7222
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id60A
Drain Source On State Resistance0.0019ohm
On Resistance Rds(on)0.0024ohm
Transistor MountingSurface Mount
Power Dissipation Pd104W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Transistor Case StylePowerPAK SO
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The SI7141DP-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, battery switch and load switch applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0019ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0024ohm
Power Dissipation Pd
104W
Gate Source Threshold Voltage Max
1V
Power Dissipation
104W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability