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SI5902BDC-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 4 A, 4 A, 0.053 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI5902BDC-T1-GE3
Newark Part No.
Re-Reel04X9765
Cut Tape04X9765
Your Part Number
Technical Datasheet
No Longer Available
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5902BDC-T1-GE3
Newark Part No.
Re-Reel04X9765
Cut Tape04X9765
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.053ohm
Drain Source On State Resistance P Channel0.053ohm
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel3.12W
Power Dissipation P Channel3.12W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
0.053ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.12W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.053ohm
Transistor Case Style
ChipFET
Power Dissipation N Channel
3.12W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate