Print Page
SI4909DY-T1-GE3
Dual MOSFET, P Channel, 40 V, 40 V, 8 A, 8 A, 0.021 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4909DY-T1-GE3
Newark Part No.
Full Reel58T0558
Re-Reel70AC6508
Cut Tape70AC6508
Your Part Number
2,465 In Stock
Need more?
Same day shipping
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.260 | $1.26 |
| Total Price | $1.26 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.260 |
| 10+ | $0.794 |
| 25+ | $0.705 |
| 50+ | $0.617 |
| 100+ | $0.529 |
| 250+ | $0.472 |
| 500+ | $0.415 |
| 1000+ | $0.379 |
Full Reel
| Quantity | Price |
|---|---|
| 2000+ | $0.606 |
| 4000+ | $0.558 |
| 6000+ | $0.543 |
| 10000+ | $0.534 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4909DY-T1-GE3
Newark Part No.
Full Reel58T0558
Re-Reel70AC6508
Cut Tape70AC6508
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id8A
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.021ohm
Drain Source On State Resistance P Channel0.021ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.2W
Power Dissipation P Channel3.2W
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI4909DY-T1-GE3 is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for load switches, notebook and desktop PC applications.
- Halogen-free
- TrenchFET® power MOSFET
- 100% Rg and UIS tested
Applications
Industrial, Computers & Computer Peripherals, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
0.021ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.2W
Qualification
-
MSL
-
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds
40V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.021ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for SI4909DY-T1-GE3
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability