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SI4838BDY-T1-GE3
MOSFET, N CH, 12V, 0.0021OHM, 34A, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4838BDY-T1-GE3Copy
Manufacturer Standard Lead Time38 weeks
Newark Part No.97W2660
Your Part Number
1,423 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.590 |
| 10+ | $1.400 |
| 100+ | $1.280 |
| 500+ | $1.080 |
| 1000+ | $1.050 |
| 2500+ | $0.956 |
| 5000+ | $0.937 |
Price for:Each
Minimum: 1
Multiple: 1
$2.59
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4838BDY-T1-GE3Copy
Manufacturer Standard Lead Time38 weeks
Newark Part No.97W2660
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id34A
Drain Source On State Resistance2700µohm
On Resistance Rds(on)0.0021ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd5.7W
Gate Source Threshold Voltage Max400mV
Power Dissipation5.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
2700µohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
34A
On Resistance Rds(on)
0.0021ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5.7W
Power Dissipation
5.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate