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SI3590DV-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.062 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI3590DV-T1-GE3Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.35R6220
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.854 |
| 6000+ | $0.837 |
| 9000+ | $0.820 |
| 15000+ | $0.803 |
| 30000+ | $0.786 |
| 75000+ | $0.769 |
| 150000+ | $0.752 |
| 300000+ | $0.734 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$2,562.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3590DV-T1-GE3Copy
Manufacturer Standard Lead Time14 weeks
Newark Part No.35R6220
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id2.5A
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel0.062ohm
Drain Source On State Resistance P Channel0.062ohm
Transistor Case StyleTSOP
No. of Pins6Pins
Power Dissipation N Channel830mW
Power Dissipation P Channel830mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Product Overview
The SI3590DV-T1-GE3 is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Ultra low RDS(on) for high Efficiency and optimized for high side and low side operation. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- Low conduction losses
Applications
Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.062ohm
No. of Pins
6Pins
Power Dissipation P Channel
830mW
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.062ohm
Transistor Case Style
TSOP
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate