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| Quantity | Price |
|---|---|
| 1+ | $0.501 |
| 10+ | $0.473 |
| 25+ | $0.441 |
| 50+ | $0.411 |
| 100+ | $0.382 |
| 250+ | $0.361 |
| 500+ | $0.348 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3477DV-T1-GE3
Newark Part No.61AC1932
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id8A
On Resistance Rds(on)0.014ohm
Drain Source On State Resistance0.0175ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd4.2W
Gate Source Threshold Voltage Max1V
Power Dissipation4.2W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.014ohm
Transistor Case Style
TSOP
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
0.0175ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
4.2W
Power Dissipation
4.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability