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SI2323DDS-T1-GE3
MOSFET, P-CH, -20V, -5.3A, SOT-23
Available to Order
Manufacturer Standard Lead Time: 38 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $1.190 | $5.95 |
| Total Price | $5.95 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $1.190 |
| 10+ | $0.868 |
| 15+ | $0.794 |
| 25+ | $0.719 |
| 50+ | $0.645 |
| 125+ | $0.570 |
| 250+ | $0.559 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2323DDS-T1-GE3Copy
Manufacturer Standard Lead Time38 weeks
Newark Part No.
Re-Reel01AC4978RL
Cut Tape01AC4978
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.3A
Drain Source On State Resistance0.039ohm
On Resistance Rds(on)0.032ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.7W
Power Dissipation Pd1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.039ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
No. of Pins
3Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
5.3A
On Resistance Rds(on)
0.032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Alternatives for SI2323DDS-T1-GE3
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
