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SI2309CDS-T1-GE3
Power MOSFET, P Channel, 60 V, 1.6 A, 0.345 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2309CDS-T1-GE3
Newark Part No.
Full Reel96AJ0108
Cut Tape69W7188
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Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2309CDS-T1-GE3
Newark Part No.
Full Reel96AJ0108
Cut Tape69W7188
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.6A
On Resistance Rds(on)0.36ohm
Drain Source On State Resistance0.345ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.7W
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOT-23
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology.
- Halogen-free
Applications
Audio, Signal Processing
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.36ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.7W
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
1.6A
Drain Source On State Resistance
0.345ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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