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SI2309CDS-T1-BE3
Power MOSFET, P Channel, 60 V, 1.6 A, 0.345 ohm, TO-236, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2309CDS-T1-BE3Copy
Manufacturer Standard Lead Time62 weeks
Newark Part No.42AJ0557
Product RangeTrenchFET Series
Your Part Number
2,900 In Stock
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2309CDS-T1-BE3Copy
Manufacturer Standard Lead Time62 weeks
Newark Part No.42AJ0557
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.345ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Series
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Product Range
TrenchFET Series
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.345ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability