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SI2309CDS-T1-BE3
Power MOSFET, P Channel, 60 V, 1.6 A, 0.345 ohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2309CDS-T1-BE3
Newark Part No.42AJ0557
Product RangeTrenchFET Series
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2309CDS-T1-BE3
Newark Part No.42AJ0557
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.345ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Series
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Product Range
TrenchFET Series
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.345ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability