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SI1308EDL-T1-GE3
Power MOSFET, N Channel, 30 V, 1.4 A, 0.132 ohm, SOT-323, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1308EDL-T1-GE3Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel96AJ0100
Re-Reel05AC7745RL
Cut Tape05AC7745
Product RangeTrenchFET Series
Your Part Number
Available to Order
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.644 | $0.64 |
| Total Price | $0.64 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.644 |
| 50+ | $0.411 |
| 100+ | $0.275 |
| 250+ | $0.246 |
| 500+ | $0.216 |
| 1000+ | $0.198 |
| 2500+ | $0.181 |
| 5000+ | $0.164 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.173 |
| 9000+ | $0.155 |
| 15000+ | $0.151 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1308EDL-T1-GE3Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel96AJ0100
Re-Reel05AC7745RL
Cut Tape05AC7745
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.4A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.132ohm
Transistor MountingSurface Mount
Power Dissipation Pd500mW
Rds(on) Test Voltage10V
Transistor Case StyleSOT-323
Gate Source Threshold Voltage Max1.5V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchFET Series
SVHCTo Be Advised
Product Overview
The SI1308EDL-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET with power dissipation at 500mW.
- PWM optimized for fast switching
- 100% Rg Tested
- Up to 1800V ESD protection
- Halogen-free
Applications
Power Management, Industrial
Warnings
ESD sensitive device, take proper precaution while handling the device.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.11ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.4A
Drain Source On State Resistance
0.132ohm
Power Dissipation Pd
500mW
Transistor Case Style
SOT-323
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
TrenchFET Series
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate