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MXP120A250FW-GE3
Silicon Carbide MOSFET, Single, N Channel, 10.5 A, 1.2 kV, 0.313 ohm, TO-247AD
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ManufacturerVISHAY
Manufacturer Part NoMXP120A250FW-GE3Copy
Newark Part No.26AM1590
Product RangeMaxSiC Series
Your Part Number
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Product Information
ManufacturerVISHAY
Manufacturer Part NoMXP120A250FW-GE3Copy
Newark Part No.26AM1590
Product RangeMaxSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id10.5A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.313ohm
Transistor Case StyleTO-247AD
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3.1V
Power Dissipation56W
Operating Temperature Max150°C
Product RangeMaxSiC Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
10.5A
Drain Source On State Resistance
0.313ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
3.1V
Operating Temperature Max
150°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247AD
Rds(on) Test Voltage
20V
Power Dissipation
56W
Product Range
MaxSiC Series
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate